Self-Aligned Elevated-Metal Metal-Oxide Thin-Film Transistors for Displays and Flexible Electronics

Unlike the source/drain regions - formed using extrinsic dopants such as hydrogen - of a top-gate self-aligned (SA) metal-oxide (MO) thin-film transistor (TFT), those of the presently reported bottom-gate SA MO TFT are formed using a thermal annealing process. This is shown to improve TFT scalability. Short-channel high-mobility (>20 cm
²
/Vs) bottom- gate SA MO TFTs beneficial for advanced displays and flexible electronics are presently demonstrated.