Efficient Integration of Si FET-type Gas Sensors and Barometric Pressure Sensors on the Same Substrate

In this work, we propose Si FET-type gas sensors and barometric pressure sensors that can be efficiently integrated on the same substrate using CMOS process technology and report the measurement results. The gas sensor has a localized micro-heater capable of heating up to 124 °C with a power of 4 mW. NO
₂
gas sensing is successfully achieved with this sensor. The barometric sensor has a built-in poly-Si temperature sensor that can simultaneously measure ambient temperature and atmospheric pressure. The measured atmospheric pressure varies with temperature, but with a designed neural network, accurate pressure can be obtained with an accuracy of 97.5 %.