First Demonstration of Waferscale Heterogeneous Integration of Ga2O3 MOSFETs on SiC and Si Substrates by Ion-Cutting Process

We for the first time demonstrate the heterogeneous integration of 2-inch β-Ga
₂
O
₃
thin films onto the 4H-SiC and Si (001) substrates by ion-cutting process, as well as the fabrication of high-performance β-Ga
₂
O
₃
MOSFETs on the heterogeneous wafers. 2-inch single-crystalline β-Ga
₂
O
₃
thin film with a wafer-level thickness non-uniformity below ±1.8% is transferred onto Si and SiC substrates. Three high-quality heterogeneous wafers, the Ga
₂
O
₃
-on-SiC (GaOSiC), Ga
₂
O
₃
-Al
₂
O
₃
-SiC (GaOISiC), and Ga
₂
O
₃
-Al
₂
O
₃
-Si (GaOISi) are fabricated, which have surface RMS roughness below 0.5 nm and the FWHM of XRD rocking curve of 130 arcsec. By varying the channel thickness, both enhancement- and depletion-mode MOSFETs are realized on GaOSiC wafer. As the ambient temperature increases from 300 K to 500 K, little degradation is observed in the on-resistance, forward saturation current, reverse leakage current and breakdown voltage (V
_br
) of the fabricated Ga
₂
O
₃
MOSFETs. A device V
_br
above 600 V is achieved at 500 K with a weak dependence on temperature. These results show a significantly improved device thermal stability compared to the reported Ga
₂
O
₃
-on-Ga
₂
O
₃
devices. The technology demonstrated in this work is promising to overcome the fundamental thermal limitation of Ga
₂
O
₃
electronics for high-power applications.