Performance Analysis of Double Gate Heterojunction Tunnel Field Effect Transistor

In this paper, we have done the comparison of the performance of various TFET devices like Single gated, double gated, Homojunction and the Heterojunction. All the simulations have been performed on Cogenda Software. The analysis have been done in terms of I
_ON
/I
_OFF
ratio and subthreshold swing parameters. The results show improvements in ON current by using double gated TFET structure (1.5 times more than the single gated TFET) and heterojunction structure (57 times more than the single gated TFET).