A Study of n-LDMOS Off-state Breakdown Degradation with 0.18μm BCD Technology

The off-state BV degradation was studied by TCAD simulations and silicon experiments. The degradation was caused by high electrical field in the silicon surface and poor reduced surface field (RESURF) effect during on-state, as the serious Kirk-effect made hot holes trap into the field plate. A high rated n-LDMOS off-state BV and Rdson improvement could be optimized by drift engineering to solve the off-state BV degradation issue.