Comparative Study of Total Ionizing Dose Effects on the Silicon-Controlled Rectifier Devices for HV and LV ESD Protections

In this paper, the total ionizing dose (TID) effects on low voltage triggering silicon controlled rectifier (LVTSCR) and LDMOS-SCR are studied for low voltage (LV) and high voltage (HV) ESD protections, respectively. They are fabricated in a 5V/24V 0.5-μm CDMOS process and exposed to
⁶⁰
Co gamma rays up to 200 krad(Si). The transmission line pulse (TLP) tests are performed before and after irradiation, and then the ESD performances are compared and discussed.