Breakdown Voltage Impact on Lifetime of 1200V IGBT modules under H3TRB-HVDC Testing

The focus of the High Humidity High Temperature Reverse Bias with High DC Voltage (H3TRB-HVDC) is the quality of the chips and the package of the IGBT modules. For H3TRB-HVDC, the blocking voltage of 80% normal voltage was applied to the samples instead of 80V bias. In order to confirm that whether the measured breakdown voltage has influence on the lifetime of IGBT modules, two groups of samples with different breakdown voltage used in this paper. The test results shown that the lifetime was positively correlated with the breakdown voltage. The failure spot was found out at edge terminal edge passivation layer of IGBT chip by the failure analysis.