Failure Analysis of the Effect of Hydrogen on GaAs Device

In this paper, we analyzed the reduction of the signal-to-noise ratio of the signal received by the system caused by the failure of a GaAs device. By the means of fault tree, it can be concluded that the failure is in that the operating point of the GaAs device was not selected at the appropriate gate voltage bias position, and at the same time the device gain decreased under the hydrogen effect. Finally, it led to the systematic function failure. A large number of contrast tests concerning the failure components and the samples were designed and implemented during the analysis. The suitable working bias voltage was determined. The degradation impact caused by the hydrogen effect on the GaAs device performance was analyzed. It provides reference for controlling the failure mode of the device during its subsequent production and application.