Simultaneous 2D carrier polarity (dC/dV) and density (dC/dz) distribution measurement of Si/SiC MOSFET based on scanning nonlinear dielectric microscopy

As a semiconductor 2D carrier distribution measurement method, we have developed simultaneous measurement technology of dC/dV (polarity) and dC/dz (density) based on SNDM. This method has been applied to IMEC's dopant step sample and Si power MOSFET sample to confirm the monovalent functional property of the dC/dz and the signal profile according to the carrier density. Furthermore, this method has been also applied to the SiC planar MOSFET. As a result, the dC/dz monovalent functional property in a wide carrier density range of p ++ (Poly-Si gate), n + (Source), p (Body), n- (Epi) has been shown.