EOFM measurements of lateral and vertical Bipolar Transistors in Silicon and SiGe:C Technologies

This publication presents Electro-Optical Frequency Mapping (EOFM) on lateral and vertical bipolar junction transistors. The acquired EOFM measurements are used to characterize the different operation modes of a parasitic bipolar junction transistor, as well as a modern heterojunction bipolar transistors (HBT) in SiGe:C BiCMOS technology. Furthermore, EOFM results of a golden and a faulty SiGe:C HBT are compared, showing clearly distinguishable results.