Mitigating Process Induced Degradation in p- and n-Czochralski Silicon Wafers with Tabula Rasa

We report on the bulk properties of of n- and p- type Czochralski silicon (Cz-Si) after a high-temperature annealing process known as Tabula Rasa (TR), which is primarily used to annihilate oxygen precipitates. We find significant differences in n- and p-type substrates as well as a strong dependence on the ambient in the resulting process induced degradation. We attribute this ambient dependence to either injection of interstitials or vacancies into the bulk during TR. Finally, we show that subsequent gettering is enhanced due to the annihilation of oxygen precipitates.