Mechanism investigation of Sb-doping induced large-grain Cu(InGa)Se2 films processed from quaternary targets

In this study, In order to investigate the effects of Sb-doping induced grain growth of Cu(InGa)Se
₂
(CIGS) films processed from quaternary target, thin metallic Sb layers have been deposited in the bottom, in the middle and on the top of CIGS layer, respectively. The effects of temperature on Sb-doped CIGS grain size are explored. These results demonstrate that the incorporated Sb in the bottom and middle of CIGS films could significantly increase the grain size of films at selenization temperature of 500 °C, while the incorporated Sb on the top of CIGS takes little effect on grain growth.