Review of Bandgap Voltage Reference Architectures for Long-Range Passive RFID Applications

A comparison among three different bandgap voltage reference (BGR) architectures is presented in this paper. It provides an overview of the current state-of-the-art of low-power BGR circuits suitable for low power as passive RFID tags. The designs were implemented in a standard 180 nm CMOS process although provided conclusions can be extended to most CMOS or BiCMOS fabrication processes. The benefits and limitations of every architecture are presented. They are based on theoretical analysis and simulations where features like voltage supply range, settling time, power consumption, driving strength and temperature coefficient are considered.