High power horizontal cavity surface-emitting InGaN superluminescent diode

In this work, a high power horizontal cavity surfaceemitting InGaN superluminescent diode is demonstrated. The amplified spontaneous emission is accomplished by angling the facets at 45° producing total internal reflection and surface emission on the substrate side. This novel structure allows total optical peak power above 2 W during pulsed mode operation. This optical peak power is the highest reported for a superluminescent diode based on GaN. Also, the electroluminescence spectrum for current above the superluminescent threshold shows a smooth emission with a full width at half maximum of 6 nm centered in 416 nm.