Investigation of Negative Bias Temperature Instability (NBTI) Effects on Standard Cell Library Circuits Performance

Negative bias temperature instability (NBTI) is an significant reliability problem that can affect circuit performance. This paper presents an investigation of reliability on standard cell library circuit performance based on R-D model. Predictive Technology Model (PTM) and HSPICE MOSRA were used for circuit reliability study. Low Power (LP) PTM model of 32nm was used in this simulation. The delay time, threshold voltage and average power were investigated with the existence of the NBTI problems. The time exponent of the threshold voltage shift shows that the defect mechanisms consist of interface trap, Nit or combination of Nit and oxide trap, Not. The propagation delay increased as the aged year increased. The average power not affected due to the NBTI effect.