A Wideband W-Band Driver Amplifier in 0.1 μm GaAs Process

This paper presents a wideband low ripple W-band driver amplifier in 0.1 μm GaAs Process. The proposed amplifier consists of four common-source stages. In the amplifier, the matching network and system stability, which is important to the amplifier performance, are analyzed. Measured gain shows a peak gain of 19.2 dB at 99 GHz with a relative 3-dB bandwidth of 42% (from 67 GHz to 103 GHz). The input and output return losses are better than 6 dB and 8 dB, respectively. The saturated output power (Psat) is greater than 14 dBm in the 3-dB bandwidth frequency range with a peak value of 17.1 dBm at 100 GHz. The amplifier consumes the power of 297 mW with a supply voltage of 3.3 V and an area of 1.3 × 0.7 mm
²
.