New Extraction Method of the Bipolar Transistor Model Parameters Used in Bandgap Type Voltage References

A new extraction method of the critical model parameters affecting temperature variation of the bandgap type voltage reference is presented. According to the new method, the two model parameters describing the linear and non-linear temperature dependence of the bandgap type voltage references are extracted from the raw data of the reference voltage vs. temperature and not from direct measurements of the bipolar transistor.