Experimental and Theoretical Validation of Ga2O3 Thin Films Deposited by Physical Vapor Deposition

In this work, we have shown that betagallium oxide (Ga
₂
O
₃
) thin films of differing thickness could be obtained by physical vapor deposition method, employing proper annealing conditions. These enable us to compare the variation of optical properties like transparency, band gap in these phases. Apart from these, our analysis of transmittance spectra of beta-Ga
₂
O
₃
indicated the reduction of structural disorders (amorphous to crystalline) with increase in annealing temperature. The calculated band gap based on Density Functional Theory (DFT) for bulk beta-Ga
₂
O
₃
thin films ~ 4.9 eV (direct) at room temperature is in excellent agreement with our experimentally measured values. This work will serve as design guidance for the new Ga
₂
O
₃
based thin film electronics.