Analysis of SiC MOSFETs Basic Parameters Aiming Application in Power Drivers for Electric Vehicles

The vehicular fleet around the world is going through an enormous transition in its energetic matrix, mostly because governments around the globe are concerned about pollution. This paper focus on the research of Wide Band Gap (WBG) Silicon Carbide (SiC) Vertical Double Diffused Metal Oxide Semiconductor Field Effect Transistor (VDMOSFET), concerning to its use in electric vehicles, through experimental and TCAD simulation analysis. Three main parameters were addressed: interface charge, channel doping concentration and gate to channel overlap/underlap. For each of the parameters, the IxV curves were traced for several values. Threshold voltage (Vth), maximum transconductance (max. gm) and subthreshold slope (S) were analyzed. This paper describes in detail the device characteristics and mathematical models that are needed for TCAD.