An Inductorless 60GHz Down-Conversion Mixer in 22nm FD-SOI CMOS Technology

This paper presents an inductorless 60GHz down-conversion mixer integrated in a 22nm FD-SOI CMOS technology. The mixer is based on a single-balanced architecture followed by a common-source output buffer, and it performs a zero-IF conversion with -3dB corner frequency at 1GHz. The maximum differential single-side-band (SSB) conversion gain is 6dB, in agreement with simulation and circuit analysis. The required LO power is -4dBm, while the dissipated power is 18mW. The silicon footprint is 0.05mm
²
, which to the knowledge of the authors is the smallest reported so far for down-conversion mixers operating at 60GHz, with a factor 3 of improvement.