10W Ka Band MMIC Power Amplifiers based on InAlGaN/GaN HEMT Technology

This paper presents the measurement results of a MMIC power amplifiers (PA), based on InAlGaN/GaN HEMT technology, for Ka band applications. The three-stages MMIC is operating within a bandwidth of [25-31] GHz and demonstrate over this bandwidth a saturated output power of 40 dBm. Each stage uses 8 x 50μm gate width HEMTs fabricated with a 0.15 μm gate length on 70 μm thick SiC substrate.