Evaluation and Characterization of Parallel Connected Ultra-Low-Inductance 400A SiC MOSFET Modules

During the last decade, utilization of SiC devices in power electronics applications has steadily increased. For high power and low voltage applications, it is inevitable the paralleling of high current semiconductor modules. The superb advantages of SiC devices such as low switching losses are obtained by very fast switching transients, where the module's inductance plays a significant role in the performance of the converter. It is desired to have a power module with the least possible inductance; however, this might result in currents and thermal unbalance between modules. In this paper, the parallel connection of SiC ultra-low inductance 400 A, 1.2 kV MOSFET modules has been analyzed and experimentally verified. Small differences in the dynamic and static current balance have been found. The results showed that maximum total switching losses (ET) difference was less than 15% and the maximum current unbalance was less than 8.3%.