Analysis of PiN Diode Reverse Recovery Based on the Field-circuit Couple Modeling

PiN diodes are known to significantly contribute to switching energy as a result of reverse-recovery charge during the turn-off process. The reverse recovery characteristic is commonly determined by the diode and its commutation loop. In order to integrate the influence of circuit parameters and semiconductor behaviors in devices, the reverse recovery is studied through the compact field-circuit couple modeling. Firstly, the basic principle for numerical and analytical modeling is introduced, and the model accuracy is validated with the comparison with the empirical formula calculation. Then, the simulation and experiment of the reverse recovery process of Infineon 1200V/40A IGBT freewheel diode are carried out. Through the mechanism analysis and model results, the effectiveness of the field-circuit modeling for the comprehensive analysis of the junction temperature in device and the parasitic parameters in commutation loop is verified.