Single Event Effects Testing for the ADC12DJ3200QML-SP 12-bit, Dual 3.2-GSPS Single 6.4-GSPS, RF-Sampling, JESD204B, Analog-to-Digital Converter (ADC)

The effects of heavy-ion irradiation on the single-event effect performance of the Texas Instruments ADC12DJ3200QML-SP and its JESD204B serialized interface were characterized using the K500 Cyclotron facility at Texas A&M University. The results demonstrate latch-up immunity up to LET
EFF
= 120 MeV-cm
²
/mg at T
J
= 125°C while operating at the maximum recommended operating supply voltages. Dynamic cross sections for the code error rate of the device and the serialized interface are also presented.