The Threshold Voltage Degradation of MOSFET in Heavy-ion Single Event Effect Test

A degradation is studied that the gate-source threshold voltage of BSS138BK N-channel MOSFET decreased dramatically in heavy-ion single event effect test. The comparative study is performed by laser test, total ionizing dose test and no-irradiation room temperature test. This case study illustrate the parameter degradation process, comparative test results and the analysis.