Effects of 1MeV electron irradiation on the photoluminescence of GaInNAs/GaAs single quantum well structure

Minimizing the impact of radiation-induced degradation in optoelectronic devices based dilute nitride is crucial in applications. The effects of 1MeV electron irradiation (1×10
¹⁴
e/cm
²
~ 1×10
¹⁶
e/cm
²
range) on undoped GaInNAs/GaAs single quantum well (QW) structure has been studied by low temperature photoluminescence (PL). PL spectra of GaInNAs/GaAs QW are measured before and after electron irradiation. The results show a slight enhancement of the PL intensity in relatively low electron fluence, and then subsequent deterioration of PL with increase of cumulative electron fluence. The enhancement in PL intensity at low electron doses are explained by recombination-enhanced defect reaction model and the degradation at high electron doses are explained by irradiation induced defects in lattice.