Experimental Finding for Single Event Dielectric Rupture of MOS Capacitor in GaN-based Power Device

Heavy ion test was conducted on gallium nitride (GaN) based power device to assess the Single Event Effect (SEE) sensitivity. Catastrophic failure was found on GaN-based power device irradiated by 205-MeV germanium (Ge) ion. It was due to Single Event Dielectric Rupture (SEDR) of metal oxide semiconductor (MOS) capacitor. The SEDR of MOS capacitor was function of bias voltage and the Linear Energy Transfer (LET) of incident heavy ion. It is recommended that the heavy ion test should be performed for SEDR for power device made of MOS capacitor