The Progress of SEB and SEGR Irradiation Hardening Technology for Power MOSFET

This paper analyses the failure mechanism and striking process of heavy ions irradiated vertical double diffusion power metal-oxide-semiconductor field effect transistor(VDMOS), concludes three irradiation hardening technologies, shielding technology, recombination technology and enhancement technology, summarizes the development of single-event irradiation hardening technologies for power VDMOS in domestic and international.These technologies could provide reference for the researchers who are engaging in the single-event irradiation hardening technology of semiconductor device.