Thermal measurement of dissipated power for Gallium Nitride Gate Injection Transistors

In this paper, a novel thermal measurement of power dissipation for Gallium Nitride (GaN) Gate Injection Transistors (GITs) is presented. The novelty of this approach lies in utilization of a reverse conducting operation mode of power devices to determine the dependency between the dissipated power and a stable temperature of transistors. Power dissipation of a prototype DC-DC power converter has been investigated for various scenarios by using the proposed thermal method.