High-Power Flip-Chip Bonded Photodiode Working at 1064nm

We demonstrate back-illuminated flip-chip-bonded modified uni-traveling carrier photodiodes designed for operation at 1064 nm wavelength. The bandwidth is 40 GHz and the RF output power is 23.5 dBm at 25 GHz. The photodiode has responsivity of 0.46 A/W at 1064 nm and low dark current of 2 nA at -8 V.