Influence of Temperature on the Performance of Dual Gate Phosphorene TFET

In this work, we present the influence of temperature on the dc characteristics of monolayer dual gate phosphorene tunnel FET (DGP-TFET) using a novel hybrid methodology. Initially, density functional theory (DFT) is used to calculate electronic parameters such as bandgap and effective mass of monolayer x-direction (armchair) phosphorene. Then the dc characteristics of the DGP-TFET are studied using TCAD simulation by incorporating appropriate electronic parameters obtained using DFT. The variation of dc characteristics such as drain current, off-current, transconductance for various temperatures are studied.