Morphology Control of Mixed Halide Perovskite for its Application in Low-cost Thin Film Transistor

Organic-inorganic perovskite has gained popularity in recent times because of its high carrier mobility, easy and low cost processing for various optoelectronic application. In this paper we have demonstrated the variation of the growth and nucleation of perovskite thin film on various dielectric layers. Thereafter we report the fabrication and characterization of perovskite FET. We propose that growth of the perovskite depends on the dielectric layer on which it is coated. MACI and PbI
₂
based perovskite forms a stable film and the nucleation depends on the aging of the precursor solution. Hence by controlling of the perovskite film morphology, a high performing device can be obtained. Hence a low cost and well performing TFT is reported.