Development of the planar AlGaN/GaN bow-tie diodes for terahertz detection

The planar bow-tie (BT) diodes for terahertz (THz) detection were developed of AlGaN/GaN high-electron-mobility transistor (HEMT) structures employing a shallow ion implantation for electric isolation. The diodes were developed with different width of the apex varying in the range from 17 μm to 0.6 μm. The responsivity of the sensor was increased non-linearly with the decrease of the apex width. In addition, the signal dependence on frequency was found with maximum of the response at about of 150 GHz frequency.