High Gauge Factor Strain Sensors Based on Vanadium Doped Molybedenum Disulfide 2D Films

This paper reports the piezoresistive performance of two-dimensional (2D) material of vanadium (V) doped MoS
₂
films. A novel method for forming large-area and uniform 2D film is based on sulfurization of a Mo thin film. I-V characteristics indicate that V atoms doping indeed decreases the resistivity of MoS
₂
. Strain sensors based on V-doped MoS
₂
resistive elements are fabricated. By using a four-point bending method, a gauge factor (GF) of ~140 for V-doped MoS
₂
is obtained. This demonstration of substitutional doping in MoS
₂
could help in realizing high sensitive strain sensing applications.