Atomic hydrogen annealing of AlOx/GeOx/a-Ge stack structure fabricated in oxygen atmosphere

To study improvement of electrical characteristics by atomic hydrogen, we investigated effect of atomic hydrogen annealing (AHA) on AlO
_x
/GeO
_x
/a-Ge stack structure. From the electrical properties and X-ray photoelectron spectroscopy analysis, reduction of leakage current and negative charge density in the AlO
_x
/GeO
_x
insulator demonstrated using AlO
_x
/GeO
_x
/a-Ge stack structure. We considered that the leakage current reduction was related to the insulator film quality and hydrogen termination. The reduction of negative charge density was considered that negative charges became inactive by reaction with atomic hydrogens.