InAlN-MIS-HEMTs with High Fmax on Si Substrates

InAlN-MIS-High Electron Mobility Transistors (HEMTs) with 90 nm gate length were fabricated on a Si substrate. The devices, with pad electrodes, exhibited on-resistance of
$1.38\ \Omega \mathrm{mm}$
, contact resistance of
$0.35\ \Omega \mathrm{mm}$
, transconductance of 460 mS/mm, and fT/fmax of 100/245 GHz when biased at
$\mathrm{Vd} =10\mathrm{V}$
. In addition, the MIS structures reduced the forward current by 2-digits in comparison to MES structures, which were fabricated on the same wafer.