Enabling Low Temperature Aluminum Nitride ALD by Use of a Novel Hydrazine Source

Aluminum nitride (AlN) ALD has attracted recent attention because it is a direct wide-bandgap, III-V semiconductor with excellent dielectric and piezoelectric properties, good thermal conductivity, and high mechanical strength. There is a need for low temperature ALD to prevent the detrimental effects of atomic diffusion. However, thermal ALD of AlN with NH3/Trimethyl Aluminum (TMA) precursors is problematic below 450°C.