Electrical and structural properties of Sn-doped $\alpha$-Ga2O3 thin films grown by mist chemical vapor deposition

We report on the structural and electrical properties of Sn-doped Ga
2
O
3
(GTO) thin films on c-sapphire substrates grown by mist chemical deposition (mist CVD). Gallium(III) acerylacetonate (Ga(acac)
3
) and either Sn(acac)
2
or tin(II) chloride dehydrate were used as source materials of Ga and Sn, respectively. Each solution of Ga (SGa) and Sn (SSn), which the source materials are solved in deionized water and a small amount of hydrochloric acid, was prepared at the concentration of 0.05 mol/L, and the solutions mixed with different ratio were used for the growth. With increasing the ratio of Sn solution (SSn/(SGa+SSn)), the concentration of Sn incorporated into the film was increased. The electrical conductivity was obtained in the films with the Sn concentration of less than 0.34 %. The crystal structure was maintained to
$\alpha$
-Ga
2
O
3
in this Sn concentration range, while the crystal quality rapidly deteriorates when the concentration of Sn was over 0.34 %.