Tuning Lasing Emission towards Long Wavelengths in GaAs-(In, Al)GaAs Core-Multishell Nanowires on Silicon

Recent demonstrations of direct integration of GaAs-based nanowire lasers on Si photonic circuits exhibited efficient in-coupling of lasing emission to proximal waveguides - however, transmission in the Si waveguide suffered from high absorption losses. To overcome these issues, we develop here GaAs-(In, Al)GaAs-based nanowire lasers with lasing emission tunable to longer wavelengths (
$> 1.1\ \mu \mathrm{m}$
) by using coaxial InGaAs/AlGaAs MQW (multi-quantum well) structures as active gain media. We illustrate also the sensitive interplay between design and growth parameters of the MQW structure on the resulting emission wavelength and lasing threshold.