Regional band-gap tailoring of 1550nm-band InAs quantum dot Intermixing by controlling ion implantation depth

We investigated the regional control of the band-gap originated from the highly-stacked quantum dots (QD) on the InP (311)B substrate changing ion implantation depths using quantum dot intermixing (QDI) technique the QDI process involved B+ implantation and rapid thermal annealing (RTA) at 600 °C, in which the ion implantation depths were controlled regionally with a combination of SiO
₂
and resist (AZ) films. Controlled blue shift of the photoluminescence (PL) spectra verified the effectiveness of the controlled QDI process for the application to semiconductor photonic integrated circuits using 1550nm-band QDs.