Structural and optical properties of GaAs film grown on a glass substrate using a large-grained Ge seed layer for solar cell applications

We fabricate a light absorbing GaAs layer on a glass substrate using a Ge seed layer formed by Al-induced crystallization. The GaAs layer grown at 520 °C exhibits the grain size of 50 μm and the internal quantum efficiency of 60% with a bias voltage of 1.0 V. These values are the largest among the GaAs layers grown on amorphous substrates at low temperatures (<; 600 °C).