GaN HEMT Characterization for Base Stations

This paper describes characterization method for the current source of GaN HEMTs and its relation to the efficiency, optimal load impedance, and operating classes. We have demonstrated a time-domain measurement setup working at low-frequency (LF) is a powerful tool for accurate evaluation of the current source. Furthermore, this characterization method enables RF characteristics such as output power and drain efficiency on arbitrary different classes of operation.