Chemical vapor deposition growth of boron incorporated graphitic carbon nitride film for carbon based semiconductor systems

For the creation of carbon based semiconductor systems, we have proposed controlling the bandgap energy toward the blue/ultraviolet or red/infrared region by incorporating substitutional atoms into graphitic carbon nitride (g-C
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) as novel synthesis method to realize the Hexagonal boron carbon nitride (h-BCN). B incorporated g-C
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films were grown by thermal chemical vapor deposition using melamine and ammonia borane as source species. B incorporation into g-C
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, which was indicated the substitution for C atoms, could be confirmed by analyzing the individual atomic bonds and stoichiometric chemical composition. Photoluminescence spectra exhibited the peak shift toward to high energy side, expecting the impact of B incorporation on energy band structure.