GaN-based Inverter by Monolithic Integration of Threshold Controlled MOSFETs

Fabrication and device characteristics of GaN-based inverter is investigated towards future GaN-based functional monolithic integrated circuit. n-channel enhancement and depletion mode MOSFETs (E-MOSFET and D-MOSFET) were fabricated on a low-density Mg-doped p-GaN substrate. Threshold voltage control of MOS-FET to obtain D-MOSFET was made by preferential Si implantation. Operation of E-MOSFET and D-MOSFET was confirmed in I
D
-V
DS
and I
D
-V
GS
characteristics. Successful operation of E/D type inverter with a maximum voltage gain beyond unity was demonstrated in monolithically integrated E-MOSFET and D-MOSFET on a same chip.