InxGa1-xN Alloys Grown by Plasma-Assisted Molecular Beam Epitaxy (PAMBE) with Growth Rates Up to $1.3\ \boldsymbol{\mu} \mathbf{m}/\mathbf{hr}$

In this work In
x
Ga
1-x
N films were grown with growth rates up to
$1.30\ \mu \mathrm{m}/\text{hr}$
enabled by large active nitrogen fluxes up to
$3.5\ \mu \mathrm{m}/\text{hr}$
while maintaining high quality crystal structure and surface morphology. At growth temperatures of 550 and 600°C compositions up to In
0.22
Ga
0.78
N were achieved. Minor In incorporation was observed at 700°C, and further optimization of growth parameters is expected to yield moderate In incorporation at this temperature.