Electrically injected $1.64\ \boldsymbol{\mu} \mathbf{m}$-emitting In0.65Ga0.35As 3-QW laser diodes grown on mismatched substrates by MOVPE

High-performance quantum well laser diodes, which emit near the telecom C-band (
$\sim 1.55\mu \mathrm{m}$
), are realized by employing an InP metamorphic buffer layer (MBL) with dislocation filters on either GaAs or Si substrates by metal-organic vapor phase epitaxy (MOVPE). Devices with an In
0.65
Ga
0.35
As 3-quantum well (QW) active region grown on a GaAs substrate with InP MBL and InAs QW dislocation filters (DF) exhibit laser emission (
$\lambda_{\text{lasing}}$
) at 1654 nm with a threshold current density (J
th
) of 0.96 kA/cm
²
and the slope efficiency (
$\eta_{\text{slope}}$
) of 0.13 W/A. The same device structure grown on Si substrate with an InP MBL and InAs quantum dot DF exhibits
$\lambda_{\text{lasing}}\sim 1623\ \text{nm}, \mathrm{J}_{\text{th}}\sim 1.56\text{kA}/\text{cm}^{2}$
and
$\eta_{\text{slope}}\sim 0.0265\mathrm{W}/\mathrm{A}$
at 298 K under pulsed current injection. For comparison, the threshold current density and slope efficiency values from devices grown on an InP substrate are 0.6 kA/cm
²
and 0.174 W/A respectively. The characteristic temperature coefficients of the threshold current (To) and slope efficiency (T
1
) for devices on either InP (T
0
∼52K, T
1
∼150K), GaAs (T
0
∼51K, T
1
∼113K), or Si (T
0
∼41K, T
1
∼53K) substrate are compared and discussed.