Performance Limits of 2H-GaN Vertical Superjunction Schottky rectifiers, MOSFETs and HEMTs

In this paper, we have quantitatively evaluated the performance limits of 2H-GaN vertical superjunction Schottky rectifiers, MOSFETs and HEMTs by device scaling. We have demonstrated the Ron,sp of 2H-GaN vertical conventional p/n superjunction (SJ) devices are limited by channel and JFET region on-resistance up to 10kV. While the Ron,sp limits of 2H-GaN vertical natural polarization superjunction (PSJ) devices are limited by channel and JFET region on-resistance up to 100kV. The results show the specific on-resistance of vertical superjunction devices are 10x and 1000x lower than the 2H-GaN 1D limit with breakdown voltage of 1kV and 10kV respectively.