Irradiation Effects on Induced Electron Conductivity in an un-doped GaAs/AlGaAs Quantum Well Hall Bar

We measure conductivity and light response of a top gated electric field-induced 2DEG carrier in a GaAs based quantum-well heterostructure to confirm their stability as a consequence of removing the Si doping layer. Etched sidewall contacting techniques and surface treatment studies allowed carrier induction in a quantum-dot-fabrication compatible device structure. We performed quantum Hall measurements to evaluate the conduction stability and observed temporal decays of the induced carriers and illumination at several conditions that could still be redeemed by choosing proper fabrication techniques and operation voltage conditions. Mesoscopic research on such un-doped devices have possibility of efficiently interfacing single photons and single electron spins whereas that of holes.