Effects of chamber pressure on the hydrogenated amorphous silicon thin film by microwave annealing

We present to depositing passivation layers a-Si:H thin films on the top and bottom of the n-type crystalline silicon by different process parameters using very high frequency (VHF, 40.68 MHz) plasma-enhanced chemical vapor deposition (PECVD). Comparing furnace annealing furnace with microwave annealing (MWA) we obtain excellent passivation efficacy can in significantly faster of annealing in semiconductor processing.