Investigation of the Gate Resistance and the RC snubbers on the EMI Suppression in Applying of the SiC MOSFET

Although the emergence of SiC MOSFET could perfectly satisfies the strict requirements of motor drive system towards higher operation efficiency and power density, many problems, including severe voltage/current stress and electromagnetic interference (EMI), will consequently generate because of the high switching speed of SiC MOSFET. With the precondition of ensuring the power density and the operation efficiency of the motor drive system, this paper mainly emphasizes on contrasting the effect of increasing the gate drive resistance (R
_g
) and appending the RC snubbers on the EMI suppression under high voltage and high current environment. Through further experimental research, we have reached the conclusion that the attachment of the RC snubbers obviously plays a better role in both restraining the level of EMI and maintaining the switching loss. In other words, this improvement is likely to promote the operation efficiency and power density, which is anticipated in the motor drive system.